Threshold instability in IGFET's due to emission of leakage electrons from silicon substrate into silicon dioxide
- T.H. Ning
- C.M. Osburn
- et al.
- 2008
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Interdiffusion between GaAs and AlAs
- L.L. Chang
- A. Koma
- 2008
- Applied Physics Letters
PaperNew precision technique for measuring the concentration versus depth of hydrogen in solids
- W.A. Lanford
- H.P. Trautvetter
- et al.
- 2008
- Applied Physics Letters
PaperModel for current-driven motion of magnetic bubble lattices
- G.R. Henry
- 2008
- Applied Physics Letters
PaperUse of electron-trapping region to reduce leakage currents and improve breakdown characteristics of MOS structures
- D.J. Dimaria
- D.R. Young
- et al.
- 2008
- Applied Physics Letters
PaperMicromechanical light modulator array fabricated on silicon
- K.E. Petersen
- 2008
- Applied Physics Letters
PaperIn1-xGaxAs-GaSb1-yAsy heterojunctions by molecular beam epitaxy
- H. Sakaki
- L.L. Chang
- et al.
- 2008
- Applied Physics Letters
PaperInk jet printing nozzle arrays etched in silicon
- E. Bassous
- H.H. Taub
- et al.
- 2008
- Applied Physics Letters
Paper20-MHz acoustic waves from pulsed thermoelastic expansions of constrained surfaces
- R.J. Von Gutfeld
- R.L. Melcher
- 2008
- Applied Physics Letters
PaperGeneration of 16-μm radiation by four-wave mixing in para-hydrogen
- M.M.T. Loy
- P.P. Sorokin
- et al.
- 2008
- Applied Physics Letters
Paper