Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
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- 2004
- IEDM 2004
Conference paper
Publications
14467 results for Physical Sciences
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
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- 2004
- IEDM 2004
Conference paperLasing in a 2D photonic bandgap structure
- A. Jebali
- R.F. Mahrt
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- 2004
- SPIE Photonics Europe 2004
Conference paperHigh performance and low power transistors integrated in 65nm bulk CMOS technology
- Z. Luo
- A. Steegen
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- 2004
- IEDM 2004
Conference paperVideo frame classification for learning media content understanding
- Ying Li
- Chitra Dorai
- 2004
- Optics East 2004
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- S.V. Nitta
- S. Purushothaman
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- 2004
- IEDM 2004
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- A.C. Callegari
- P. Jamison
- et al.
- 2004
- IEDM 2004
Conference paperSpintronic materials and devices: Past, present and future!
- Stuart S.P. Parkin
- 2004
- IEDM 2004
Conference paperUltra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs
- D. Singh
- P. Solomon
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- 2004
- IEDM 2004
Conference paperRF power potential of 90 nm CMOS: Device options, performance, and reliability
- Jörg Scholvin
- David R. Greenberg
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- 2004
- IEDM 2004
Conference paper