Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication
- K.W. Guarini
- A. Topol
- et al.
- 2002
- IEDM 2002
Conference paper
Publications
14466 results for Physical Sciences
An example of how an unconventional order parameter symmetry may open new perspectives in the design of HTS Josephson junctions
- F. Tafuri
- F. Lombardi
- et al.
- 2002
- SPIE Optical Science and Technology 2002
Conference paperThe effective drive current in CMOS inverters
- M.H. Na
- E. Nowak
- et al.
- 2002
- IEDM 2002
Conference paperSub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002
Conference paperResist requirements and limitations for nanoscale electron-beam patterning
- J. Alexander Liddle
- Gregg M. Gallatin
- et al.
- 2002
- MRS Proceedings 2002
Conference paperMetal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
Conference paperCharge trapping in high K gate dielectric stacks
- Sufi Zafar
- Alessandro Callegari
- et al.
- 2002
- IEDM 2002
Conference paperHigh mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
Conference paperNoise performance of a low base resistance 200 GHz SiGe technology
- D.R. Greenberg
- B. Jagannathan
- et al.
- 2002
- IEDM 2002
Conference paperPercolation in dense storage arrays
- Scott Kirkpatrick
- Winfried W. Wilcke
- et al.
- 2002
- Physica A: Statistical Mechanics and its Applications
Conference paper