Multilayer At03-Si02Combination (MASC) Films as a Partial H2 Diffusion Barrier for Use on Ge SurfacesThomas O. SedgwickJoseph A. Aboaf1968IEEE T-EDPaper
The Pressure Dependence of Barrier Heights in Ge-GaAs n-n HeterojunctionsW.E. HowardA.B. Fowleret al.1967IEEE T-EDPaper