Dependence of pattern dimensions on proximity functions in electron beam lithography
- Mihir Parikh
- 2008
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Hole trapping in the bulk of SiO2 layers at room temperature
- R.F. DeKeersmaecker
- D.J. Dimaria
- 2008
- Journal of Applied Physics
PaperPhase transition waves: Solitons versus shock waves
- Rolf Landauer
- 2008
- Journal of Applied Physics
PaperCharging effects in the secondary ion mass spectrometric analysis of targets containing low-conductivity regions
- W. Reuter
- M.L. Yu
- et al.
- 2008
- Journal of Applied Physics
PaperCalculation of changes in pattern dimensions to compensate for proximity effects in electron lithography
- Mihir Parikh
- 2008
- Journal of Applied Physics
PaperThe thin-film formation of rhodium silicides
- S. Petersson
- R.L. Anderson
- et al.
- 2008
- Journal of Applied Physics
PaperThe analysis of dislocations in strained III-V semiconductor crystals using elastobirefringence
- H. Booyens
- J.H. Basson
- 2008
- Journal of Applied Physics
PaperComment on Correlation between process-induced in-plane distortion and wafer bowing in silicon
- Richard E. Gegenwarth
- 2008
- Journal of Applied Physics
ReviewTexture of NiSi films on Si(001), (111), and (110) substrates
- C. Detavernier
- J.L. Jordan-Sweet
- et al.
- 2008
- Journal of Applied Physics
PaperCrystallization properties of ultrathin phase change films
- Simone Raoux
- Jean L. Jordan-Sweet
- et al.
- 2008
- Journal of Applied Physics
Paper