Ion beam annealing of semiconductors
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- et al.
- 2008
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Josephson junctions of small area formed on the edges of niobium films
- R.F. Broom
- A. Oosenbrug
- et al.
- 2008
- Applied Physics Letters
PaperRefractory metal silicide formation induced by As+ implantation
- M.Y. Tsai
- C.S. Petersson
- et al.
- 2008
- Applied Physics Letters
PaperAmbient effects on the diffusion of Cr and Si in thin Pt films
- Chin-An Chang
- W.K. Chu
- 2008
- Applied Physics Letters
PaperIonic species in a silane plasma
- Ivan Haller
- 2008
- Applied Physics Letters
PaperEffect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys
- M. Eizenberg
- G. Ottaviani
- et al.
- 2008
- Applied Physics Letters
PaperDual electron injector structure
- D.J. Dimaria
- D.W. Dong
- 2008
- Applied Physics Letters
PaperAnodic etching of p-type silicon as a method for discriminating electrically active and inactive defects
- H. Föll
- 2008
- Applied Physics Letters
PaperLaser annealing of silicon implanted with both argon and arsenic
- E. Rimini
- W.K. Chu
- et al.
- 2008
- Applied Physics Letters
PaperElastic rubber-waveguide geodesic optical deflector
- Mark Johnson
- 2008
- Applied Physics Letters
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