Interfacial oxide formation from intrinsic oxygen in W-HfO2 gated silicon field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2004
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Defects and strain relaxation in silicon-germanium-on-insulator formed by high-temperature oxidation
- S.W. Bedell
- K.E. Fogel
- et al.
- 2004
- Applied Physics Letters
PaperThe subgap current in Nb/AlOx/Nb tunnel junctions
- F.P. Milliken
- R.H. Koch
- et al.
- 2004
- Applied Physics Letters
PaperMeasurement of picosecond laser pulse widths
- J.A. Armstrong
- 2004
- Applied Physics Letters
PaperEfficient visible electroluminescence at 300°K from Ga 1-xAlxAs p-n junctions grown by liquid-phase epitaxy
- H. Rupprecht
- J. Woodall
- et al.
- 2004
- Applied Physics Letters
PaperElectroluminescence near band gap in gallium phosphide containing shallow donor and acceptor levels
- L.M. Foster
- M.H. Pilkuhn
- 2004
- Applied Physics Letters
Paper3-D imagery and holograms of objects illuminated in white light
- R.V. Pole
- 2004
- Applied Physics Letters
PaperMagnetic and optical properties of transparent RbNiF3
- M.W. Shafer
- T.R. McGuire
- et al.
- 2004
- Applied Physics Letters
PaperQuasi-CW, high numerical aperture, inductively excited ion laser
- C.B. Zarowin
- C.K. Williams
- 2004
- Applied Physics Letters
PaperOn the dielectric constant of GaAs at microwave frequencies
- N. Braslau
- 2004
- Applied Physics Letters
Paper