Voltage polarity effects in GST-based phase change memory: Physical origins and implications
- A. Padilla
- G.W. Burr
- et al.
- 2010
- IEDM 2010
Conference paper
Publications
26883 results for Science
Extending a model-driven engineering environment to support product line engineering
- Dolev Dotan
- Tomer Amarilio
- et al.
- 2010
- ECMFA 2010
Workshop paperContext slices: Representing contexts in OWL
- Chris Welty
- 2010
- ISWC 2010
Workshop paperNonvolatile polymer memory with nanoconfinement of ferroelectric crystals
- Seok Ju Kang
- Insung Bae
- et al.
- 2010
- Nano Letters
PaperUV curing-induced photoresist poisoning in advanced ULK BEOL integration schemes
- Y.C. Ee
- D. Kioussis
- et al.
- 2009
- ADMETA 2009
Conference paperAdvanced metallization developments for 32-nm node CMOS technology contact architecture
- Doug H. Lee
- Valli Arunachalam
- et al.
- 2009
- ADMETA 2009
Conference paperA decision theoretic approach to data leakage prevention
- Janusz Marecki
- Mudhakar Srivatsa
- et al.
- 2010
- SocialCom/PASSAT 2010
Conference paperCoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Conference paperElectron-electron separation in molecular hydrogen
- M.P. Barnett
- F.W. Birss
- et al.
- 2010
- Molecular Physics
PaperA new method to reconstruct recombination events at a genomic scale
- Marta Melé
- Asif Javed
- et al.
- 2010
- PLoS Computational Biology
Paper