Anelasticity due to intrinsic defects in gaas
- B.K. Chakraverty
- R.W. Dreyfus
- 2004
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Pyrometric measurements of si, ge, and gaas wafers between 100°and 700°c
- F. Jona
- H.R. Wendt
- 2004
- Journal of Applied Physics
PaperPreparation and properties of solution-grown epitaxial p - N junctions in gap
- M.R. Lorenz
- M.H. Pilkuhn
- 2004
- Journal of Applied Physics
PaperDetailed study of switching current in barium titanate
- M.E. Drougard
- 2004
- Journal of Applied Physics
PaperContact Potential Measurements on Cleaned Germanium Surfaces
- Alan B. Fowler
- 2004
- Journal of Applied Physics
PaperX-Ray Integrated Intensity of Germanium Effect of Dislocations and Chemical Impurities
- Boris W. Batterman
- 2004
- Journal of Applied Physics
PaperOn the delayed yield in germanium and indium antimonide [12]
- D. Dew-Hughes
- G.E. Brock
- 2004
- Journal of Applied Physics
PaperDielectric behavior of single crystals of tri-glycine sulfate (TGS) from 1 kc to 2500 Mc [5]
- A. Lurio
- E. Stern
- 2004
- Journal of Applied Physics
PaperStudy of order in annealed and irradiated alpha brass by lattice parameter measurements
- R. Feder
- Arthur S. Nowick
- et al.
- 2004
- Journal of Applied Physics
PaperContact potential measurements on graphite [13]
- Alan B. Fowler
- 2004
- Journal of Applied Physics
Paper