Potential Si atomic layer epitaxy processes using halogenated Si precursors
- D.D. Koleske
- S. Gates
- et al.
- 1993
- Thin Solid Films
Paper
Publications
14462 results for Physical Sciences
Dopants on Si(100) surfaces: useful probes of silicon atomic layer epitaxy?
- S. Gates
- D.D. Koleske
- 1993
- Thin Solid Films
PaperThe chemisorption and reaction of GeCl4 with Si(100)
- D.A. Lapiano-Smith
- F.R. McFeely
- 1993
- Thin Solid Films
PaperAtomic layer doping for Si
- D.A. Grützmacher
- K. Eberl
- et al.
- 1993
- Thin Solid Films
PaperAmic acid doping of polyaniline: Characterization and resulting blends
- Marie Angelopoulos
- Niranjan Patel
- et al.
- 1993
- Synthetic Metals
PaperLocal structure about Mn atoms in In1-xMnxAs diluted magnetic semiconductors
- A. Krol
- Y.L. Soo
- et al.
- 1993
- Physical Review B
PaperAb initio valence-bond cluster model for ionic solids: Alkaline-earth oxides
- A. Lorda
- F. Illas
- et al.
- 1993
- Physical Review B
PaperSurface stress and interface formation
- R.M. Tromp
- 1993
- Physical Review B
PaperDistortion of the core exciton by the swift electron and plasmon wake in spatially resolved electron-energy-loss scattering
- P.E. Batson
- 1993
- Physical Review B
PaperPhotoelectron forward-scattering attenuation from the Cu(001) surface
- L.J. Terminello
- J.J. Barton
- 1993
- Physical Review B
Paper