Boron atom distributions in ion-implanted silicon by the (n,4He) nuclear reaction
- J.F. Ziegler
- B.L. Crowder
- et al.
- 2003
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Densities of amorphous Si films by nuclear backscattering
- M.H. Brodsky
- D. Kaplan
- et al.
- 2003
- Applied Physics Letters
PaperObservation of Fresnel fringes in the conventional scanning electron microscope
- A.N. Broers
- 2003
- Applied Physics Letters
PaperHigh-resolution thermionic cathode scanning transmission electron microscope
- A.N. Broers
- 2003
- Applied Physics Letters
PaperInteracting Bloch lines: A new mechanism for wall energy in bubble domain materials
- A.P. Malozemoff
- 2003
- Applied Physics Letters
PaperSuperresolution in optical data storage
- Harold Wieder
- 2003
- Applied Physics Letters
PaperThe use of thermally stimulated ionic currents with a hyperbolic heating rate to measure sodium motion in rf-sputtered SiO2 films
- T.W. Hickmott
- 2003
- Applied Physics Letters
PaperRange distribution of implanted ions in SiO2, Si 3N4, and Al2O3
- W.K. Chu
- B.L. Crowder
- et al.
- 2003
- Applied Physics Letters
PaperCircular etch pits in ion-implanted amorphous silicon films
- K.N. Tu
- S.I. Tan
- et al.
- 2003
- Applied Physics Letters
PaperDiscovery of anomalous base regions in transistors
- J.F. Ziegler
- G.W. Cole
- et al.
- 2003
- Applied Physics Letters
Paper