Mechanism of silicon surface roughening by reactive ion etching
- Gottlieb S. Oehrlein
- Robert G. Schad
- et al.
- 2004
- Surface and Interface Analysis
Paper
Publications
24864 results for Exploratory Science
Ferroelectric liquid crystalline polysiloxanes with high spontaneous polarization and possible applications in nonlinear optics
- Heinrich Kapitza
- Rudolf Zentel
- et al.
- 2004
- Advanced Materials
PaperAdhesion of copper and chromium films to polyimide studied by static SIMS of the interface
- W.J. van Ooij
- R.H.G. Brinkhuis
- et al.
- 2004
- Surface and Interface Analysis
PaperVoltage contrast XPS—a novel scheme for spatially resolved XPS studies
- John J. Boland
- 2004
- Surface and Interface Analysis
PaperInterfacial reactions between Al and RuO2, MoOx and WNx diffusion barriers on Si
- S.-E. Hörnström
- A. Charai
- et al.
- 2004
- Surface and Interface Analysis
PaperA comparative study of SIMS depth profiling of boron in silicon
- J.B. Clegg
- A.E. Morgan
- et al.
- 2004
- Surface and Interface Analysis
PaperElectric‐field‐induced room‐temperature doping in CuInSe2
- Abram Jakubowicz
- Geula Dagan
- et al.
- 2004
- Advanced Materials
PaperQuantitative time‐of‐flight secondary ion mass spectrometry of a perfluorinated polyether
- David E. Fowler
- Roboert D. Johnson
- et al.
- 2004
- Surface and Interface Analysis
PaperInfluence of the bombarding ion energy and surface composition on the ground‐state atom fraction in solids analysis using multiphoton resonance ionization
- David L. Pappas
- David M. Hrubowchak
- et al.
- 2004
- Surface and Interface Analysis
PaperStudy of near‐surface disorder and surface residues after reactive Ion etching of Silicon
- G.S. Oehrlein
- G.J. Coyle
- et al.
- 2004
- Surface and Interface Analysis
Paper