Effects on interface barrier energies of metal-aluminum oxide-semiconductor (MAS) structures as a function of metal electrode material, charge trapping, and annealing
- D.J. DiMaria
- 2003
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Effect of thermal annealing and ion radiation on the coercivity of amorphous GdSingle Bond signCo films
- R. Hasegawa
- R.J. Gambino
- et al.
- 2003
- Journal of Applied Physics
PaperDefect centers in oxygen-deficient rf-sputtered SiO2 films. II. Thermoluminescence
- T.W. Hickmott
- 2003
- Journal of Applied Physics
PaperResistivity of Permalloy thin films
- A.F. Mayadas
- J.F. Janak
- et al.
- 2003
- Journal of Applied Physics
PaperObservation of compressed picosecond pulses of high repetition rate from a Nd-glass laser
- K.H. Drexhage
- K.B. Eisenthal
- 2003
- Journal of Applied Physics
PaperGrain-boundary solute electromigration in polycrystalline films
- P.S. Ho
- J.K. Howard
- 2003
- Journal of Applied Physics
PaperAnnealing properties of ion-implanted p-n junctions in silicon
- Alwin E. Michel
- F. Fang
- et al.
- 2003
- Journal of Applied Physics
PaperSurface reactions on MOS structures
- E.I. Alessandrini
- D.R. Campbell
- et al.
- 2003
- Journal of Applied Physics
PaperSuperconductive tunneling in junctions containing lead-gold layered films
- S. Basavaiah
- S.K. Lahiri
- 2003
- Journal of Applied Physics
PaperStructure of electroplated and vapor-deposited copper films. III. Recrystallization and grain growth
- A. Gangulee
- 2003
- Journal of Applied Physics
Paper