Electrical properties of DX centers in GaAs and AlGaAs
- P.M. Mooney
- 1989
- Radiation Effects and Defects in Solids
Paper
Publications
14466 results for Physical Sciences
Rie-induced damage and contamination in silicon
- Young H. Lee
- G.S. Oehrlein
- et al.
- 1989
- Radiation Effects and Defects in Solids
PaperPolar relaxation mode in pure and iron-doped barium titanate
- M. Maglione
- R. Böhmer
- et al.
- 1989
- Physical Review B
PaperSpectroscopy with the scanning tunnelling microscope: A critical review
- R.M. Tromp
- 1989
- Journal of Physics Condensed Matter
ReviewFT-raman spectroscopy of thin films by integrated and fiber optics techniques
- C.G. Zimba
- V.M. Hallmark
- et al.
- 1989
- Proceedings of SPIE 1989
Conference paperAre GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs
- M.V. Fischetti
- S.E. Laux
- 1989
- IEDM 1989
Conference paperLaser transfer of organic adsorbates: a test case using coronene surface patterns transferred with micrometer resolution to IR Windows
- M. DeVries
- H.E. Hunziker
- et al.
- 1989
- Proceedings of SPIE 1989
Conference paperCharacteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
- L.K. Wang
- D.S. Wen
- et al.
- 1989
- IEDM 1989
Conference paperA self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS
- D.S. Wen
- C.C.-H. Hsu
- et al.
- 1989
- IEDM 1989
Conference paperA 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
Conference paper