70 nm damascene-gate MOSFETs with minimal polysilicon gate-depletionHussein I. HanafiRussell Arndtet al.2001ESSDERC 2001Conference paper
New polysilicon disposable sidewall process for sub-50 nm CMOSK.L. LeeD. Boydet al.2001ESSDERC 2001Conference paper
Carbon implanted halo for super halo characteristic NFETs in bulk and SOIJohn Ellis-MonaghanKam-Leung Leeet al.2001ESSDERC 2001Conference paper