CHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.
- T.N. Nguyen
- D.L. Harame
- et al.
- 1985
- IEDM 1985
Conference paper
Publications
8 results at IEDM 1985
0. 5- mu M-CHANNEL CMOS TECHNOLOGY OPTIMIZED FOR LIQUID-NITROGEN-TEMPERATURE OPERATION.
- J.Y.-C. Sun
- Y. Taur
- et al.
- 1985
- IEDM 1985
Conference paperSELF-ALIGNED PROCESSES FOR THE GaAs GATE FET.
- H. Baratte
- D.C. La Tulipe
- et al.
- 1985
- IEDM 1985
Conference paperON THE IMPURITY PROFILES OF DOWN SCALED BIPOLAR TRANSISTORS.
- D.D. Tang
- G.P. Li
- et al.
- 1985
- IEDM 1985
Conference paperMINORITY CARRIER TRANSPORT IN SILICON.
- D.D. Tang
- F. Fang
- et al.
- 1985
- IEDM 1985
Conference paperRELIABILITY ANALYSIS OF SELF-ALIGNED BIPOLAR TRANSISTOR UNDER FORWARD ACTIVE CURRENT STRESS.
- T.C. Chen
- C. Kaya
- et al.
- 1985
- IEDM 1985
Conference paperSELF-CONSISTENT CALCULATION OF ELECTRON STATES IN NARROW CHANNELS.
- S.E. Laux
- Alan C. Warren
- 1985
- IEDM 1985
Conference paperGaAlAs/GaAs HETEROSTRUCTURE BIPOLAR TRANSISTORS: EXPERIMENT AND THEORY.
- S. Tiwari
- 1985
- IEDM 1985
Conference paper