High-K gate stack breakdown statistics modeled by correlated interfacial layer and high-k breakdown path
- G. Ribes
- P. Mora
- et al.
- 2010
- IRPS 2010
Conference paper
Publications
7 results at IRPS 2010
Hot-carrier degradation in undoped-body etsoi fets and soi finfets
- Miaomiao Wang
- Pranita Kulkarni
- et al.
- 2010
- IRPS 2010
Conference paperPBTI relaxation dynamics after ac VS. DC stress in high-K/metal gate stacks
- K. Zhao
- J.H. Stathis
- et al.
- 2010
- IRPS 2010
Conference paperImpact of charge trapping on the voltage acceleration of TDDB in metal gate/high-k n-channel MOSFETs
- A. Kerber
- A. Vayshenker
- et al.
- 2010
- IRPS 2010
Conference paperCharacterization of high-k/metal gate stack breakdown in the time scale of ESD events
- Yang Yang
- James Di Sarro
- et al.
- 2010
- IRPS 2010
Conference paperPBTI response to interfacial layer thickness variation in Hf-based HKMG nFETs
- D.P. Ioannou
- E. Cartier
- et al.
- 2010
- IRPS 2010
Conference paperPhotovoltaic (PV) cells characterization using advanced optical tools
- Franco Stellari
- Steven E. Steen
- et al.
- 2010
- IRPS 2010
Conference paper