Christophe R. Tretz, C.T. Chuang, et al.
IEEE International SOI Conference 1998
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
Christophe R. Tretz, C.T. Chuang, et al.
IEEE International SOI Conference 1998
J. Warnock, P.F. Lu, et al.
Bipolar Circuits and Technology Meeting 1989
J.B. Kuang, M.J. Saccamango, et al.
IEEE International SOI Conference 1999
R.V. Joshi, C.T. Chuang, et al.
VLSI Technology 2001