Conference paper
FinFET SRAM for high-performance low-power applications
Rajiv V. Joshi, Richard Q. Williams, et al.
ESSDERC/ESSCIRC 2004
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
Rajiv V. Joshi, Richard Q. Williams, et al.
ESSDERC/ESSCIRC 2004
J. Warnock, J.D. Cressler, et al.
IEDM 1991
C.T. Chuang, Ken Chin, et al.
IEEE Journal of Solid-State Circuits
P.F. Lu, C.T. Chuang
CICC 1992