A 1-to-1050-mA DLDO with Rising-Edge Computational Control and Load-Dependent Feedback Achieving 46-mV/ns DVS Rate and 0.15-ps FoM

This brief presents a 1 mA–1050 mA computational DLDO for modern SoCs that achieves fast load transient, high efficiency, and fast DVS. A rising -edge computation enables accurate load prediction with only 1 nF Cout, while a load -dependent feedback maintains low ripple across a wide load range. Reusing the computation hardware for DVS improves the DVS rate by 4.6×. Fabricated in 28-nm CMOS, the DLDO achieves 0.15 ps FoM, 46.2 mV/ns DVS, <17 mV ripple, and 99.98% peak current efficiency.