Tailoring dielectric materials for robust BEOL reliability
G. Bonilla, T.M. Shaw, et al.
IRPS 2012
Static secondary ion mass spectrometry (SSIMS) is shown to probe directly the coordination of surface silicon atoms to adsorbed hydrogen. Signal intensities of secondary ions, SiD+, SiD2+, and SiD3+ observed in SSIMS following D atom adsorption on Si(111)-(7×7) are proportional to the coverages of SiD, SiD2, and SiD3, respectively. Temperature-programmed desorption is used to quantify the three coverages. The SiD3+ signal in temperature-programmed SSIMS is used to measure the first-order EA (31±2 kcal mol-1) and v (1×1010±1 s-1) for surface SiD3 decomposition. © 1989.
G. Bonilla, T.M. Shaw, et al.
IRPS 2012
S. Gates, G. Dubois, et al.
JES
D.D. Koleske, S. Gates, et al.
Applied Physics Letters
S. Gates, D. Neumayer, et al.
Journal of Applied Physics