T. Schneider, E. Stoll
Physical Review B
A ZnS ac thin film electroluminescence device can exhibit a brightness vs. voltage hysteresis loop or "memory effect". We show that this "memory effect" is associated with the filamentary nature of the dissipative current. The filaments show a bistability in their conductive state, i.e., the nature of the "ac negative resistance" involved is current controlled. Experimental results on single filament switching under voltage, pulse width and light address are presented. © 1979.
T. Schneider, E. Stoll
Physical Review B
R. Ghez, J.S. Lew
Journal of Crystal Growth
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering