J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
A ZnS ac thin film electroluminescence device can exhibit a brightness vs. voltage hysteresis loop or "memory effect". We show that this "memory effect" is associated with the filamentary nature of the dissipative current. The filaments show a bistability in their conductive state, i.e., the nature of the "ac negative resistance" involved is current controlled. Experimental results on single filament switching under voltage, pulse width and light address are presented. © 1979.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Revanth Kodoru, Atanu Saha, et al.
arXiv
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids