Conference paper
Electronic properties of quantum wells in perturbing fields
R.T. Collins, L. Vina, et al.
Proceedings of SPIE 1989
Paper
AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
Abstract
We have grown AlGaAs/GaAs heterostructures on (111) oriented GaAs substrates by molecular beam epitaxy. Materials with good optical and electrical properties, including mobility enhancement in two-dimensional electron and hole gases, have been obtained for the first time.
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