Chung-Hsun Lin, Mohan V. Dunga, et al.
IEEE Transactions on Electron Devices
Paper
Compact modeling of variation in FinFET SRAM cells
Abstract
Editor's note: FinFET technology is a possible solution to achieve a better power/performance trade-off for SRAM cells. This article provides a comprehensive analysis of the variations in FinFET devices, their impact on SRAM stability, and a statistical design procedure for FinFET SRAM cells. © 2010 IEEE.
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