Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility
- Ruqiang Bao
- Brian Greene
- et al.
- 2015
- IEDM 2015
Conference paper
Publications
14 results for Chung-Hsun Lin
A comparative study of fin-last and fin-first SOI FinFETs
- Darsen Lu
- Josephine Chang
- et al.
- 2013
- SISPAD 2013
Conference paperChannel doping impact on FinFETs for 22nm and beyond
- Chung-Hsun Lin
- R. Kambhampati
- et al.
- 2012
- VLSI Technology 2012
Conference paperModeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond
- Chung-Hsun Lin
- Wilfried Haensch
- et al.
- 2011
- VLSI Technology 2011
Conference paperGate capacitance of cylindrical nanowires with elliptical cross-sections
- Amlan Majumdar
- Chung-Hsun Lin
- 2011
- Applied Physics Letters
PaperNon-planar device architecture for 15nm node: FinFET or trigate?
- Chung-Hsun Lin
- Josephine Chang
- et al.
- 2010
- IEEE International SOI Conference 2010
Conference paperHot-carrier degradation in undoped-body etsoi fets and soi finfets
- Miaomiao Wang
- Pranita Kulkarni
- et al.
- 2010
- IRPS 2010
Conference paperExtraction of effective oxide thickness for SOI FINFETs with high-κ/Metal gates using the body effect
- Sujata Paul
- Frank Yeh
- et al.
- 2010
- IEEE Electron Device Letters
PaperCompact modeling of variation in FinFET SRAM cells
- Darsen D. Lu
- Chung-Hsun Lin
- et al.
- 2010
- IEEE Design and Test of Computers
PaperFinFET resistance mitigation through design and process optimization
- Cindy Wang
- Josephine Chang
- et al.
- 2009
- VLSI-TSA 2009
Conference paper