Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
We calculate low field conductivity and mobility as a function of a sample length for small semiconductor samples. When the sample length is much smaller than the mean free path the current density is proportional to the applied voltage so that the apparent low field mobility is proportional to the device length. Calculation of the apparent low field mobility for high mobility GaAs devices shows that the size effects may be important for sample lengths smaller than 2 μm. © 1981.
Imran Nasim, Melanie Weber
SCML 2024
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics