Determination of the energy-dependent conduction band mass in SiO₂

The energy dependence of the conduction band mass in amorphous SiO2 was deduced from quantum interference oscillations in the ballistic electron emission microscope current, and separately from Monte Carlo simulations of the electron mean free paths obtained by internal photoemission. The results imply a strong nonparabolicity of the conduction band of SiO2. © 1999 American Institute of Physics.