A.B. McLean, R.M. Feenstra, et al.
Physical Review B
Paper
Local transport and trapping issues in Al2O3 gate oxide structures
Abstract
The bias dependence of interfacial barriers in Al2O3-based metal-oxide-semiconductor structures was studied by ballistic electron emission spectroscopy. Strong image force reductions of the barriers were observed. A conduction band offset between Al2O3 and Si of 2.78 eV was obtained. Electron trapping into levels that overlap the Si band gap and are located near the Si-Al2O3 interface led to charge densities of ∼2.5 × 1012cm-2. © 2000 American Institute of Physics.
Related
L.Å. Ragnarsson, S. Guha, et al.
IEEE Electron Device Letters
H.J. Wen, R. Ludeke
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
R. Ludeke, H.J. Wen, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures