Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Electron-energy-loss spectra recorded from very small volumes of diamond containing individual dislocations show extra intensity within the band gap just below the 1sto conduction-band threshold energy, when compared to spectra recorded from neighboring defect-free regions. This is interpreted as direct evidence for the presence of vacant defect states associated with the dislocation structure. The contribution of the * states from the surface layers to this region of the spectra is completely removed by calculating the difference between the spectra recorded on and off the defect. © 1989 The American Physical Society.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Sung Ho Kim, Oun-Ho Park, et al.
Small
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993