M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Electron-energy-loss spectra recorded from very small volumes of diamond containing individual dislocations show extra intensity within the band gap just below the 1sto conduction-band threshold energy, when compared to spectra recorded from neighboring defect-free regions. This is interpreted as direct evidence for the presence of vacant defect states associated with the dislocation structure. The contribution of the * states from the surface layers to this region of the spectra is completely removed by calculating the difference between the spectra recorded on and off the defect. © 1989 The American Physical Society.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules