A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Electron-energy-loss spectra recorded from very small volumes of diamond containing individual dislocations show extra intensity within the band gap just below the 1sto conduction-band threshold energy, when compared to spectra recorded from neighboring defect-free regions. This is interpreted as direct evidence for the presence of vacant defect states associated with the dislocation structure. The contribution of the * states from the surface layers to this region of the spectra is completely removed by calculating the difference between the spectra recorded on and off the defect. © 1989 The American Physical Society.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
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Technical Digest-International Electron Devices Meeting
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
J.Z. Sun
Journal of Applied Physics