Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces. In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates. © 2011 Elsevier B.V. All rights reserved.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B