A. Gangulee, F.M. D'Heurle
Thin Solid Films
We have determined energy-band dispersions E(k) and critical points for GaSb using angle-resolved-photoemission techniques. With a normal emission configuration and photon energies between 24 and 95 eV, the valence-band dispersions E(k) have been obtained along the -K-X direction, with the spin-orbit splitting 0(8-7) clearly observed. With an off-normal emission configuration, we have also determined the valence-band critical-point energies at the L point, with the spin-orbit splitting 1(L4,5-L6) clearly observed. Experimental valence-band critical-point energies at , X, and L are compared with recent theoretical results. Using published transition energies determined from reflectance measurements, we have also obtained the low-lying conduction-band critical-point energies. These valence- and conduction-band critical-point energies are tabulated to facilitate comparisons with other experimental and theoretical results. © 1980 The American Physical Society.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials