Ronald Troutman
Synthetic Metals
Paper
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
Abstract
In this study, the effect of Cluster Carbon implantation and thermal annealing for recrystallization on the properties of phosphorus doped Si (Si
Related
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Eloisa Bentivegna
Big Data 2022