S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Paper
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
Abstract
In this study, the effect of Cluster Carbon implantation and thermal annealing for recrystallization on the properties of phosphorus doped Si (Si
Related
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
A. Gangulee, F.M. D'Heurle
Thin Solid Films