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We have made transport measurements on GaSbAlSbInAs multi-heterojunctions prepared by MBE. The result has been analyzed on the basis of electron tunneling across thin AlSb layers. © 1983.
A. Alexandrou, E. Mendez, et al.
Physical Review B
Chin-An Chang
Applied Physics Letters
Chin-An Chang, Jerng-Sik Song
Applied Physics Letters
Q.Y. Ma, E.S. Yang, et al.
Journal of Electronic Materials