Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode

Gauri Karve; Xiaoguang Zheng; Xiaofeng Zhang; Xiaowei Li; Ning Li; Shuling Wang; Feng Ma; Archie Holmes Jr.; Joe C. Campbell; G.S. Kinsey; J.C. Boisvert; T.D. Isshiki; R. Sudharsanan; Donald S. Bethune; William P. Risk

doi:10.1109/JQE.2003.817244

IEEE JQE

Paper

01 Oct 2003

Geiger mode operation of an In_0.53Ga_0.47As-In_0.52Al_0.48As avalanche photodiode

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Abstract

Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In0.52Al0.48As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16% were achieved at 130 K.

Paper