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Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode
Abstract
Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In0.52Al0.48As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16% were achieved at 130 K.
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