W.I. Wang, T.S. Kuan, et al.
Physical Review B
Paper
GeTeSingle Bond signGaAs tunnel junction: A negative-resistance schottky-type barrier
Abstract
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
Related
Chin-An Chang, R. Ludeke, et al.
Applied Physics Letters
A. Krol, C.J. Sher, et al.
Surface Science
J.C. Maan, Ch. Uihlein, et al.
Solid State Communications