Applied Physics Letters

Paper

29 Nov 2004

High-order transverse modes in GaAs lasers

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Abstract

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Paper

Calculated energy levels and optical absorption in n-type Si accumulation layers at low temperature

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Physical Review Letters

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Sequential single-phonon emission in GaAs-AlxGa1-xAs tunnel junctions

T.W. Hickmott, P. Solomon, et al.

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Effect of band tails on stimulated emission of light in semiconductors

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Evidence for a mobility edge in inversion layers

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