Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure

Self-consistent solutions for quasi-one-dimensional electron states in a narrow inversion layer channel at a GaAs/AlGaAs heterointerface have been obtained for a structure with a split gate. A simple model for fixed charge at the exposed surface in the gate opening has been used in the calculation. Energy levels for lateral motion are separated by ∼1-5 meV for the example considered, with a 0.4 μm gate opening. © 1987.