IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET’S

Paper

01 Jan 1991

IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S

No abstract available.

Conference paper

C.M. Ransom, T.O. Sedgwick, et al.

ECS Meeting 1983

Paper

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Journal of Applied Physics

Paper

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IEEE Electron Device Letters

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Applied Physics Letters