IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET’S

Paper

01 Jan 1991

IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S

No abstract available.

Paper

T.N. Jackson, M.A. Tischler, et al.

IEEE Electron Device Letters

Paper

S.L. Wright, R.F. Marks, et al.

Applied Physics Letters

Paper

A.W. Kleinsasser, T.N. Jackson

Japanese Journal of Applied Physics

Paper

A.W. Kleinsasser, T.N. Jackson, et al.

IEEE T-ED