N.J. Chou, B.L. Crowder
Journal of Applied Physics
Paper
Ion Implantation Doping of Si with 70 to 300 keV B. P. and As
Abstract
No abstract available.
Related
C.-Y. Ting, B.L. Crowder
JES
F. Jahnel, J.P. Biersack, et al.
Journal of Applied Physics
B.L. Crowder, G.D. Pettit
Physical Review