J.F. Ziegler, B.L. Crowder
Applied Physics Letters
Paper
Ion Implantation Doping of Si with 70 to 300 keV B. P. and As
Abstract
No abstract available.
Related
Conference paper
Manufacturing science and manufacturing competitiveness
B.L. Crowder
ISMSS 1989
B.L. Crowder, R.S. Title
Radiation Effects
N.J. Chou, B.L. Crowder
Journal of Applied Physics