PaperMethodology for Bipolar Process Diagnosis and Its Application to Advanced Self-Aligned Bipolar TransistorsG.P. Li, E. Hackbarth, et al.IEEE T-ED
Conference paperDesign of a high performance PD SOI for the 0.18 μm technology generationM. Sherony, S.-H. Lo, et al.ICM 2000
Conference paperA 26 ps self-aligned epitaxial silicon base bipolar technologyJ.H. Comfort, P.F. Lu, et al.VLSI Technology 1990
PaperOn the Narrow-Emitter Effect of Advanced Shallow-Profile Bipolar TransistorsG.P. Li, C.T. Chuang, et al.IEEE T-ED