Conal E. Murray, Deepika Priyadarshini, et al.
Applied Physics Letters
We have used scanning microdiffraction topography to determine the mismatch strains and local strain distributions in silicon-on-insulator substrates with overlying thin film stressor features. Analysis of the data using the edge-force model and the Ewald-von Laue dynamical diffraction theory shows the presence of an exponential strain gradient in the vicinity of the buried SiO2 /Si -substrate interface. We show that, for simple geometries, it is possible to deduce the sign of the mismatch strain simply by inspecting the microdiffraction topograph. © 2008 American Institute of Physics.
Conal E. Murray, Deepika Priyadarshini, et al.
Applied Physics Letters
P.-C. Wang, G.S. Cargill, et al.
Applied Physics Letters
Conal E. Murray, Stephen W. Bedell, et al.
Journal of Applied Physics
J.M.E. Harper, C. Cabral Jr., et al.
Journal of Applied Physics