Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
We have shown by magnetotunneling spectroscopy that at certain magnetic fields the Landé factor g of two-dimensional electrons is significantly enhanced relative to its three-dimensional value. The experiments were done using GaSbAlSbInAsAlSbGaSb heterostructures, in which a two-dimensional electron gas in the InAs layer is probed by holes from the GaSb electrodes tunneling in and out of it. The field dependence of the g factor is accounted for by the exchange interaction between electrons of the same spin. © 1994.
T.N. Morgan
Semiconductor Science and Technology
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP