Conference paper
A comparative study of fin-last and fin-first SOI FinFETs
Darsen Lu, Josephine Chang, et al.
SISPAD 2013
We present a methodology to generate performance-aware corner models (PAMs). Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (± σ and ±2σ) simulation and Monte Carlo simulation. Furthermore, PAM supports the practice of application-specific corner cards, for example, for gain-sensitive applications. © 2009 IEEE.
Darsen Lu, Josephine Chang, et al.
SISPAD 2013
Ruqiang Bao, Brian Greene, et al.
IEDM 2015
Sujata Paul, Frank Yeh, et al.
IEEE Electron Device Letters
Amlan Majumdar, Chung-Hsun Lin
Applied Physics Letters