Recent developments in ST-MRAM, including scaling

Spin-torque Magnetoresistive Random Access Memory (ST-MRAM) is the subject of intense investigation since it extends MRAM technology to densities beyond those achieved with the earlier field-switched MRAM technology. This paper reviews recent developments in ST-MRAM MTJ device technology, including exciting progress in scaling MTJs down to dimensions approaching 20 nm. Fabrication issues relevant to development of ST-MRAM, including its integration with CMOS back-end-of-line (BEOL) processing, are also briefly discussed. © The Electrochemical Society.