J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Paper
Selective chemical vapor deposition-grown Ru for Cu interconnect capping applications
Abstract
A selective chemical vapor deposition process of a ruthenium (Ru) metal capping layer was investigated for Cu interconnects in ultralarge scale integrated circuits. X-ray fluorescence spectroscopy determined the Ru deposition selectivity as a function of the deposition temperature and substrate materials. The feasibility of the selective Ru metal capping layer in the Cu interconnects for nanoelectronic applications was checked via a comprehensive evaluation including both electrical and reliability. © 2010 The Electrochemical Society.
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