S.S. Lau, W.K. Chu, et al.
Thin Solid Films
Paper
Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films
Abstract
We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.
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