Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A general formula is obtained for the electron density per unit area associated with the quasilevel in a symmetrical resonant tunneling heterostructure. The relation of this quantum-mechanical electron accumulation to the time dependence of conduction is discussed. © 1988 The American Physical Society.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.A. Barker, D. Henderson, et al.
Molecular Physics
J.Z. Sun
Journal of Applied Physics
K.N. Tu
Materials Science and Engineering: A