R. Ludeke, A. Bauer, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Stress induced charge trapping effects in SiO2/Al 2O3 gate stacks with TiN electrodes
Abstract
Stress induced charge trapping effects in SiO2/Al 2O3 gate stacks were investigated. Current-voltage (I-V) and capacitance-voltage (C-V) sensing techniques were used. The results show a strong asymmetric charge trapping effects which is due to asymmetry of the SiO2/Al2O3 and difference in work function between the TiN electrode and the Si substrate.
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