U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Conference paper
Surface potential and morphology issues of annealed (HfO 2) x(SiO 2) 1-x gate oxides
Abstract
The surface potential variations and the surface morphology of annealed (HfO 2) x(SiO 2) 1-x were investigated by noncontact atomic force microscopy (AFM) in ultrahigh vacuum. The study of the films focused on the compositional and structural characteristics of the phase separation alloy films using x-ray mediated techniques and far infrared spectroscopy. Additional modes of data acquisition included contact potential difference (CPD) and differential capacitance. CPD fluctuations were observed to have a local or fine structure component, which for the Hf-rich samples annealed at higher temperatures, correlated with the microstructure.
Related
J.A. Barker, D. Henderson, et al.
Molecular Physics
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011