Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2018
- IEDM 2018
Conference paper
Publications
45 results for M. Chudzik
Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology
- Ruqiang Bao
- Steven Hung
- et al.
- 2018
- IEDM 2018
Conference paperHighly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures
- Nicolas Breil
- A. Carr
- et al.
- 2017
- VLSI Technology 2017
Conference paperTitanium silicide/titanium nitride full metal gates for dual-channel gate-first CMOS
- Martin M. Frank
- Cyril Cabral
- et al.
- 2016
- IEEE Electron Device Letters
PaperChallenges of nickel silicidation in CMOS technologies
- Nicolas Breil
- Christian Lavoie
- et al.
- 2015
- Microelectronic Engineering
PaperPost copper CMP hybrid clean process for advanced BEOL technology
- Wei-Tsu Tseng
- Vamsi Devarapalli
- et al.
- 2013
- IEEE Trans Semicond Manuf
PaperDeposited ALD SiO2 high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
- S. Siddiqui
- M.M. Chowdhury
- et al.
- 2013
- ECS Meeting 2013
Conference paperHybrid clean approach for post-copper CMP defect reduction
- Wei-Tsu Tseng
- Vamsi Devarapalli
- et al.
- 2013
- ASMC 2013
Conference paperCharacterization and optimization of charge trapping in high-k dielectrics
- Eduard Cartier
- Takashi Ando
- et al.
- 2013
- IRPS 2013
Conference paperEffect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
- Min Dai
- Yanfeng Wang
- et al.
- 2013
- Journal of Applied Physics
Paper