F. Assaderaghi, G. Shahidi, et al.
VLSI Technology 1996
Paper
Switching and memory in ZnSe single bond sign Ge heterojunctions
Abstract
Heterojunctions of nZnSeSingle Bond signpGe switched from a high impedance to low in 100 nsec when a threshold voltage is exceeded. Resetting occurs in the opposite bias direction in 10 nsec after sufficient current is applied. Either state is maintained with all bias removed for a minimum of two weeks. © 1970 The American Institute of Physics.
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